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Head of Epitaxy Program

Antora Energy · Sunnyvale, CAtoday
$200k – $280k

MS-level R&D / Research roles on Crosslinked list a median of $138k (97 that show pay).

Lead the III-V MOCVD epitaxy program for TPV cells, directing external suppliers and the make-vs-buy decision on in-house epitaxy.

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Worth knowing

Why it is interesting. Shapes the make-vs-buy decision and strategy for the epitaxy at the heart of Antora's TPV technology

Might not be for you. Mostly supplier management and commercial negotiation rather than hands-on growth; 8+ years required

Mostly desk workDeep specialist Senior hires only

Adjacent materials roleLead III-V MOCVD epitaxy development of multijunction TPV devices on InP substrates; tunnel junctions, quaternary absorbers, quantum wells; XRD, PL, SIMS, TEM characterization

Seniority
Manager
Work
On-site
Type
Full-time
Degree
MS
Experience
8+ yrs
Industry
Energy
Role
R&D / Research
Materials
III-V arsenide/phosphide semiconductorsInP substrates1 roletunnel junctionsquaternary absorbersquantum wells
Benefits
stock optionspaid volunteer time off401K employer contributions

Role details

Antora Energy delivers affordable, reliable energy to industry, data centers, and the grid. Our thermal batteries turn low-cost electricity into always-on heat and power, without supply-constrained critical minerals or multi-year construction timelines. We are growing our company with people who put team and mission first, value connection through laughter and joy, and work with humility and openness. We are committed to building a diverse, passionate, and creative team dedicated to a future powered by abundant, clean, low-cost energy.

Position Summary

Antora is seeking a well-rounded, high-initiative leader with deep subject-area expertise in III-V MOCVD epitaxial growth on InP substrates to lead the thermophotovoltaic (TPV) epitaxy program end-to-end. The role involves designing epitaxy development campaigns and managing the external suppliers who execute them. This requires deep knowledge of epitaxy and materials, designs of experiment, characterization techniques, data analysis, and investigative skills.

The role also requires exceptional soft skills to manage supplier relationships, provide clear instructions, negotiate timelines, pricing, and deliverables, and to work through technical and commercial issues with suppliers that arise in the course of the work. Lastly, this individual will drive the epitaxy development strategy to maximize learning speed while controlling cost. This includes driving the make-vs-buy decision on vertically integrating epitaxy R&D. This is a unique role with the ability to shape the success of the entire TPV program, the technology at the heart of Antora’s differentiating heat-to-power conversion approach. The role reports to Antora’s Head of Heat-to-Power.

Roles & Responsibilities Lead multijunction TPV epitaxy development. Drive the design and development of multijunction III-V TPV device epitaxy to meet electrical, optical, and cost targets. This especially includes tunnel junctions, quaternary absorbers, quantum wells, fast growth rates, etc. Own technical and commercial epitaxy supplier management.

Design and communicate experimental epitaxy campaigns; establish consistent calibration routines and repeatable processes; maintain data-driven specifications; negotiate timelines and pricing with suppliers; submit RFQs and POs; and manage campaign learning cycles in coordination with the device fabrication team, including data analysis and coordination of supplementary characterization (SIMS, SEM, TEM, etc.). Drive the make-vs-buy decision for in-house epitaxy capability. Lead this decision to a leadership-ready recommendation.

If "make," lead facility requirements and leasing, own reactor selection and acquisition, coordinate with facilities and supply chain teams on execution, lead technical staffing, and maintain CapEx/Opex models. If "buy," demonstrate the viability of scaling learning-cycle rate through external partners. Qualify new epitaxy suppliers. Identify, engage, and qualify new epitaxy suppliers to access new capabilities, reduce supply chain risk, and increase the pace of development. Manage the InP substrate supply chain. Own supplier relationships and negotiate specifications and pricing to ensure substrate supply does not bottleneck epitaxial development.

Key Qualifications Ph.D. or Master’s in materials science, electrical engineering, applied physics, or related field, or equivalent experience. 8+ years of hands-on epitaxy (esp. MOCVD) experience with arsenide/phosphide III-V materials grown on InP substrates. Fluent in epi characterization and interpretation (e.g. XRD, PL, morphology analysis, ECV, SIMS). Demonstrated development of tunnel junctions in As/P material systems. Strong device physics knowledge, especially for III-V optoelectronic devices (e.g. photovoltaics, laser diodes, LEDs, detectors). Comfort with device physics modeling tools.

Understanding of commercial MOCVD reactor platforms and how their features impact growth science and device outcomes. Familiarity with the facilities and safety requirements of MOCVD installation and operation. Demonstrated ability to manage external contract manufacturers to deliver on quality, speed, and cost. Exceptional soft skills including emotional intelligence, strong and clear written and verbal communication, relationship building, negotiation and conflict management skills. Willingness to exercise initiative across a wide scope, tackle unfamiliar domains, find resources, and progress through uncertainty.

Additional Qualifications Desired Prior experience with establishing or expanding epitaxy facilities, including e.g. facility selection, reactor selection and installation, facilitization, and permitting. Experience building or managing epitaxy teams including e.g. scientists/engineers, technicians, EH&S, and maintenance staff. Experience with epitaxy equipment maintenance. Technoeconomic modeling of epitaxy costs, capacity planning, etc. Experience negotiating long-term supply agreements in the compound semiconductor industry.

Work Location: Onsite - San Jose, CA Salary Range: $200,00 USD - $280,000 USD Sala ry Basis: Annual Please note that the salary range listed above reflects Antora Energy's estimated pay for this position. The actual salary offered will be within the posted range and determined based on several factors including but not limited to a candidate's experiences, credentials and expertise, as they pertain to the position's requirements.

In addition to a competitive base salary, Antora Energy’s Total Rewards program includes equity compensation in the form of stock options, a premium health benefits package with life and disability insurance, a 401K plan with employer contributions, flexible spending accounts, and an industry leading paid-time-off policy that features flexible and inclusive holiday observance, as well as paid volunteer time off. #LI-Onsite When it comes to stopping climate change, we need everyone. We believe that having a diversity of backgrounds and experiences strengthens all of us, and we strive to create an environment where every one of us is empowered to create meaningful change.

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Common questions

What is the salary for the Head of Epitaxy Program role at Antora Energy?

The listed annual base salary range is $200K–$280K. This figure is taken from the posting itself.

Does Antora Energy sponsor H-1B visas?

Antora Energy has filed H-1B petitions with the US Department of Labor in past years, but this specific posting does not explicitly mention sponsorship for the Head of Epitaxy Program role. Confirm with the employer before applying if visa support is required.

Where is the Head of Epitaxy Program role at Antora Energy based?

This role is based in Sunnyvale, CA.

What degree is required for the Head of Epitaxy Program role at Antora Energy?

This role requires a MS.

How many years of experience does this Head of Epitaxy Program role require?

The posting calls for at least 8 years of relevant experience.

What polymers or materials does this Head of Epitaxy Program role work with?

III-V arsenide/phosphide semiconductors, InP substrates, tunnel junctions, quaternary absorbers, quantum wells.

What techniques or methods are required for this Head of Epitaxy Program role?

XRD, PL, SIMS, ECV, TEM.