Photolithography Process Development Engineer (Advanced Patterning)
MS-level Process Engineering roles on Crosslinked list a median of $155k (59 that show pay). This posting does not list pay.
Develop and scale advanced 20nm-class photolithography and litho-etch patterning processes, including resist and hard mask materials selection.
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Worth knowing
Why it is interesting. Pathfinding on High NA immersion and litho shrink at a 300mm fab ramping 28nm, with direct resist and hard mask selection
Might not be for you. 5+ years of advanced-node experience required; mostly process and tool optimization rather than materials discovery
Adjacent materials roleEvaluate and select materials systems, including photoresists, hard masks, and anti-reflective coatings; lithography process development, litho-etch integration
H-1B filings
Texas Instruments filed 38 H-1B labor applications for scientist and engineer roles from Jan to Dec 2025.
Most common titles: Validation Engineering Manager, Analog Design Manager, Digital Design Manager. Median filed pay: $166K a year.
From U.S. Department of Labor disclosure data. A filing is a record of past hiring, not a promise about this role, so confirm sponsorship with the employer. Titles and filed pay ·Every employer's filings
- Seniority
- Senior
- Work
- On-site
- Type
- Full-time
- Degree
- MS
- Experience
- 5+ yrs
- Industry
- Semiconductor
- Role
- Process Engineering
Role details
Change the world. Love your job. We’re at the forefront of an exciting era of semiconductor innovation at Texas Instruments’ LFAB in Lehi, Utah — home to our state-of-the-art 300mm manufacturing facility now ramping our most advanced 28nm analog and embedded process technology in the heart of the Silicon Slopes. As part of our Advanced Technology Development (ATD) organization, you will be challenged with developing and characterizing the next generation node. We are seeking a highly skilled and hands-on Process Development Engineer with deep expertise in advanced-node semiconductor manufacturing.
This role focuses on the next generation 20nm-class logic technologies, with primary responsibility for photolithography and litho-etch integration, including advanced patterning techniques such as pitch doubling (SADP/LELE). This role will also work directly with the Resolution Enhancement Techniques (RET) team to create Optical Proximity Corrections (OPC) and validate final pattern meets design tolerance. You will play a critical role in developing, optimizing, and scaling patterning processes to meet aggressive performance, yield, and manufacturability targets. This is a high-impact position working at the intersection of lithography, materials science, and plasma etch.
Responsibilities include: Modeling & Simulation: Utilize lithography simulation software (e.g., Prolith, S-Litho) to analyze process windows and optimize patterning results. Metrology & Yield Improvement : Utilize advanced metrology (CD-SEM, Overlay, Scatterometry) to identify defects and improve Critical Dimension Uniformity (CDU) and overlay performance. Vendor & Subsystem Interaction: Work with equipment vendors to evaluate new materials, photoresists, and tool hardware upgrades. Data Analysis & SPC: Analyze process data, identify root cause, and implement robust process improvements.
Apply Statistical Process Control (SPC) and Design of Experiments (DOE) to develop new processes to enable Litho shrink processes. Pathfinding & Technology Transfer: Define pathfinding activities for new patterning technology, evaluating High NA Immersion for next-generation nodes. Lead technology transfer from R&D to HVM for photolithography processes. Photo Process Characterization: Lead development to create next generation Litho Shrink processes for 20nm class logic nodes. Drive litho-etch integration (LE, LELE, SADP / pitch doubling) for advanced patterning schemes. Develop and implement resolution enhancement techniques (RET) and optical proximity correction (OPC)strategies.
Evaluate and select materials systems, including photoresists, hard masks, and anti-reflective coatings. Characterize and reduce patterning defects, including line edge roughness (LER), CD variation, and overlay errors. Collaborate closely with Etch team to optimize pattern transfer, profile control, and CD uniformity Interface with cross-functional teams including design, integration, yield, and manufacturing.
Minimum requirements: Master's in Electrical Engineering, Materials Science, Physics, or related discipline 5+ years of industry experience in advanced semiconductor process development Direct, hands-on experience with 22nm node or comparable advanced nodes (e.g., 28nm, 14nm) Strong expertise in: Photolithography process development and optimization Litho-etch integration (LELE, SADP, pitch splitting/doubling) OPC and Resolution Enhancement Techniques (RET) methodologies Dry etch processes for pattern transfer Deep understanding of: Critical dimension (CD) control and uniformity Overlay and alignment challenges Defectivity mechanisms and mitigation strategies Preferred qualifications: PhD in Electrical Engineering, Materials Science, Physics, or related discipline Experience with self-aligned multiple patterning (SAMP, SADP, SAQP) Familiarity with advanced nodes below 22nm (e.g., 16/14nm FinFET technologies) Experience working in high-volume manufacturing environments (foundry or IDM) Exposure to industry-standard modeling and OPC tools Strong problem-solving skills with a data-driven approach Demonstrated ability to work cross-functionally in fast-paced environments Experience with advanced reticle layout and Resolution Enhancement Techniques (RET) Demonstrated strong analytical and problem-solving skills, with a collaborative team-player mindset Technical Skills: Deep understanding of Immersion lithography, DUV, and multi-patterning processes.
Demonstrated ability to Design for Manufacturing Software Skills: Proficiency with lithography simulation software (ProLith, S-Litho) and data analysis tools (e.g., JMP, Python)
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