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TI

MOCVD GaN Process Development Engineer

Texas Instruments · Dallas, TXtoday

MS-level Process Engineering roles on Crosslinked list a median of $155k (59 that show pay). This posting does not list pay.

Develop MOCVD GaN epitaxy and unit processes in the fab, from recipe development to qualification for power electronics.

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Worth knowing

Why it is interesting. Hands-on GaN epi process ownership from recipe conception through volume-production qualification at a major semiconductor maker.

Might not be for you. Fab-floor manufacturing focus with a 3-year MOCVD GaN minimum, not open-ended research.

Mostly at the benchDeep specialistFast-paced PhD-friendly Realistic requirements

Adjacent materials roleMOCVD GaN epitaxy recipe development, materials/process characterization, unit process definition; wide-band gap materials fundamentals

H-1B filings

Texas Instruments filed 38 H-1B labor applications for scientist and engineer roles from Jan to Dec 2025.

Most common titles: Validation Engineering Manager, Analog Design Manager, Digital Design Manager. Median filed pay: $166K a year.

From U.S. Department of Labor disclosure data. A filing is a record of past hiring, not a promise about this role, so confirm sponsorship with the employer. Titles and filed pay ·Every employer's filings

Seniority
Mid-level
Work
On-site
Type
Full-time
Degree
MS
Experience
3+ yrs
Industry
Semiconductor
Role
Process Engineering
Materials
GaN6 rolesIII-V semiconductor materialsIII-V HEMT materials
Techniques

Role details

Change the world. Love your job. Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world’s brightest minds, TI creates innovations that shape the future of technology. TI is helping about 100,000 customers transform the future, today. We’re committed to building a better future – from the responsible manufacturing of our semiconductors, to caring for our employees, to giving back inside our communities and developing great minds. Put your talent to work with us – change the world, love your job!

About the Job: A GaN Process Development Engineer is responsible for direct hands-on development of GaN unit processes and loop integration to support volume production of power electronics products as part of the Advanced Technology Development group. The ideal candidate should have prior demonstrated hands-on development and manufacturing experience in MOCVD GaN epi growth and semiconductor unit processes with a strong foundational knowledge of materials and devices.

Responsibilities include: Development of robust, low cost, manufacturable GaN unit processes and integration of such unit processes in support of GaN technology products Direct hands-on process development in the fab from conception to qualification including unit process definition/ requirements for MOCVD GaN epitaxy, recipe development, materials/process characterization, metrology requirements and process control setup, operational and manufacturing specifications/documents, coordination of factory automation setup, and training materials creation Development of process flow/integration requirements and specifications as required to meet electrical and process requirements Design of experiments and statistical analysis of data Direct engagement with material and equipment suppliers Keeping up with latest understanding of wide-band gap materials fundamentals and improvements and ensuring competitiveness Correlation/analysis of Device output electrical data to process/material input data and understanding to drive device performance/reliability and robustness improvements Analysis and correlation of Process/Metrology output data to Equipment/Tool input data and understanding to drive manufacturability, cost, and robustness improvements Matching performance between process tools and chambers running the same process recipe Work with multiple equipment, process, integration, component, reliability, and Test & Product engineers to achieve these goals.

The person performing this role must be capable of planning effectively, drive schedules, meet critical deadlines on multiple tasks in parallel, lead technical discussions in their area of expertise, and work effectively across organizational boundaries. They must be able to clearly communicate project status and actions.

Additionally, they must be able to interface with multiple organizations and work well on a diverse team to accomplish goals Minimum requirements: Masters in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering 3 years of experience with MOCVD GaN epitaxy growth and related Semiconductor Materials and Characterization/analysis Knowledge of Semiconductor unit process development and loop integration Knowledge/understanding of Semiconductor Manufacturing and Processes Knowledge of GaN/Semiconductor Device physics Strong knowledge of SPC methodology for process control and monitoring Strong problem partitioning skills to resolve process and equipment issues Demonstrated strong data analytics and problem-solving skills including knowledge/understanding of statistical design of experiments and analysis of large data sets Preferred qualifications: PhD in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering Knowledge of III-V HEMT Device physics, materials, and processing Knowledge of Machine Learning and AI use is a plus Experience in growing GaN epi for Power HEMTS and/or RF GaN Strong verbal and written communication skills Ability to work in teams and collaborate effectively with key stakeholders Strong time management skills that enable on-time project/milestone delivery Demonstrated ability to build strong, influential relationships Ability to work effectively in a fast-paced, rapidly changing environment and able to quickly adjust to milestone/priority changes Ability to take the initiative and drive for results

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Common questions

Does Texas Instruments sponsor H-1B visas?

Texas Instruments has filed H-1B petitions with the US Department of Labor in past years, but this specific posting does not explicitly mention sponsorship for the MOCVD GaN Process Development Engineer role. Confirm with the employer before applying if visa support is required.

Where is the MOCVD GaN Process Development Engineer role at Texas Instruments based?

This role is based in Dallas, TX.

What degree is required for the MOCVD GaN Process Development Engineer role at Texas Instruments?

This role requires a MS.

How many years of experience does this MOCVD GaN Process Development Engineer role require?

The posting calls for at least 3 years of relevant experience.

What polymers or materials does this MOCVD GaN Process Development Engineer role work with?

GaN, III-V semiconductor materials.

What techniques or methods are required for this MOCVD GaN Process Development Engineer role?

materials/process characterization, metrology, SPC, design of experiments.